著書
「ナノエレクトロニクスの基礎」,三好旦六,小川真人,土屋英昭,培風館(2007年11月2日).ISBN978-4-563-06764-9.
「量子物理」−OHM大学テキストシリーズ− 森伸也編著,執筆者:鎌倉良成,宇野重康,伊藤博介,土屋英昭,尾崎俊二,オーム社(2012年11月25日).ISBN978-4-274-21289-5.
「ナノ構造エレクトロニクス入門」,土屋英昭,コロナ社(2013年8月23日).ISBN978-4-339-00851-7.
学術論文
[1] H. Tsuchiya and T. Miyoshi, “Optically
Induced Josephson Effect,” Trans. IEICE, Vol. E71, No. 10, pp. 950-951, Oct.
1988.
[2] H. Tsuchiya, M. Ogawa, and T.
Miyoshi, “Simulation of Quantum Transport in Quantum Devices with Spatially
Varying Effective Mass,” IEEE Trans. on Electron Devices, Vol. 38, No. 6, pp.
1246-1252, Jun. 1991.
[3] H. Tsuchiya, M. Ogawa, and T.
Miyoshi, “Wigner Function Formulation of Quantum Transport in Electron
Waveguides and Its Application,” Jpn. J. Appl. Phys., Vol. 30, No. 12B, pp.
3853-3858, Dec. 1991.
[4] T. Miyoshi, H. Tsuchiya, and
M. Ogawa, “Quantum Hole Transport at the Heterointerface of Long Wavelength
Avalanche Photodiodes,” IEEE J. Quantum Electron., Vol. 28, No. 1, pp. 25-30,
Jan. 1992.
[5] H. Tsuchiya, M. Ogawa, and T.
Miyoshi, “Static and Dynamic Electron Transport in Resonant-Tunneling Diodes,”
Jpn. J. Appl. Phys., Vol. 31, No. 3, pp. 745-750, Mar. 1992.
[6] H. Tsuchiya, M. Ogawa, and T.
Miyoshi, “Quantum-Mechanical Simulation of Electron Waveguides in Linear and
Nonlinear Transport Regimes,” IEEE Trans. on Electron Devices, Vol. 39, No. 11,
pp. 2465-2471, Nov. 1992.
[7] H. Tsuchiya and T. Miyoshi, “Quantum
Transport Modeling of Mesoscopic Devices: Application of Wigner Distribution
Function,” Jpn. J. Appl. Phys., Vol. 34, No. 8B, pp. 4473-4476, Aug. 1995.
[8] Y. Okawa, H. Tsuchiya, and T.
Miyoshi, “Guided Modes in a Si-Quantum Wire and Their Control,” Jpn. J. Appl.
Phys., Vol. 35, No. 2B, pp. 861-864, Feb. 1996.
[9] H. Tsuchiya and T. Miyoshi, “Bipolar
Quantum Transport Modeling of Carrier Injection into a SCH-Quantum-Well Laser,”
IEEE J. Quantum Electron., Vol. 32, No. 5, pp. 865-872, May 1996.
[10] Y. Okawa, H. Tsuchiya, and
T. Miyoshi, “Guided Modes in an Arbitrarily Oriented Si-Quantum Wire and Their
Control,” Physica B, Vol. 227, pp. 330-332, 1996.
[11] H. Tsuchiya, Y. Hayashi, and
T. Miyoshi, “Spatially Ununiform Gain in MQW Lasers Caused by Nonequilibrium
Carrier Transport,” Physica B, Vol. 227, pp. 411-414, 1996.
[12] H. Tsuchiya and T. Miyoshi, “Evaluation
of Phase Coherent Length of Hot Electrons Based on Wigner Distribution
Function,” Jpn. J. Appl. Phys., Vol. 36, No. 7A, pp. L845-L848, Jul. 1997.
[13] H. Tsuchiya and T. Miyoshi, “Nonequilibrium
Green’s Function Approach to High-Temperature Quantum Transport in
Nanostructure Devices,” J. Appl. Phys., Vol. 83, No. 5, pp. 2574-2585, Mar.
1998.
[14] H. Tsuchiya and T. Miyoshi, “Influence
of Phonon Bottleneck on a Quantum Dot Laser,” Solid State Electron., Vol. 42,
Nos. 7/8, pp. 1443-1447, Aug. 1998.
[15] H. Tsuchiya and T. Miyoshi, “Finite
Homogeneous Broadening of Laser Gain in Quantum Dots at High Temperature,”
Microelectronic Engineering, Vol. 47, Nos. 1-4, pp. 139-141, June 1999.
[16] H. Tsuchiya and T. Miyoshi, “Quantum
Mechanical Correction of Potential in Boltzmann Transport Equation for Quantum
Transport Modeling,” Microelectronic Engineering, Vol. 47, Nos. 1-4, pp.
345-347, June 1999.
[17] H. Tsuchiya and T. Miyoshi, “Quantum Transport Modeling of Ultrasmall
Semiconductor Devices (invited),” IEICE Trans. on Electron., Vol. E82-C,
No. 6, pp. 880-888, Jun. 1999.
[18] H. Tsuchiya and T. Miyoshi, “Quantum
Mechanical Monte Carlo Approach to Electron Transport at Heterointerface,”
Superlattices and Microstructures, Vol. 27, Nos. 5/6, pp. 529-532, Jun. 2000.
(DOI: 10.1006/spmi.2000.0864)
[19] K. Matsuda, K. Ikeda, T.
Saiki, H. Tsuchiya, H. Saito, and K. Nishi, “Homogeneous Linewidth Broadening
in a In0.5Ga0.5As/GaAs Single Quantum Dot at Room Temperature Investigated Using a Highly
Sensitive Near-Field Scanning Optical Microscope,” Phys. Rev. B, Vol. 63,
pp. 121304-1〜121304-4,
Mar. 2001. (DOI: 10.1103/PhysRevB.63.1213XX)
[20] H. Tsuchiya and U. Ravaioli,
“Particle Monte Carlo Simulation of Quantum Phenomena in Semiconductor
Nanostructures,” J. Appl. Phys., Vol. 89, No. 7, pp. 4023-4029, Apr. 2001.
(DOI: 10.1063/1.1354653)
[21] H. Tsuchiya, B. Winstead, and U. Ravaioli, “Quantum Potential Approaches
for Nano-Scale Device Simulation,” VLSI Design, Vol. 13, Nos. 1-4, pp.
335-340, 2001.
[22] B. Winstead, H. Tsuchiya, and U. Ravaioli, “Quantum Corrections for
Monte Carlo Simulation (invited),” J. Computational Electronics, Vol. 1,
pp. 201-207, July 2002.
[23] H. Tsuchiya and U. Ravaioli, “A Particle Description Model for Quantum
Tunneling Effects,” J. Computational Electronics, Vol. 1, pp. 295-299,
July 2002.
[24] M. Ogawa, H. Tsuchiya, and T. Miyoshi, “Quantum Electron Transport
Modeling in Nano-Scale Devices (invited),” IEICE Trans. on Electron., Vol.
E86-C, No. 3, pp. 363-371, March 2003.
[25] H. Tsuchiya, M.
Horino, M. Ogawa, and T. Miyoshi, “Quantum Transport Simulation of Ultrathin
and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect
Transistors,” Jpn. J. Appl. Phys., Vol. 42, No. 12, pp. 7238-7243, Dec. 2003.
(DOI: 10.1143/JJAP.42.7238)
[26] H. Tsuchiya, M.
Horino, and T. Miyoshi, “Quantum Monte Carlo Device Simulation of Nano-Scaled
SOI-MOSFETs,” J. Computational Electronics, Vol. 2, No. 2/3/4, pp. 91-95, Dec.
2003.
[27] H. Tsuchiya, A.
Svizhenko, M. P. Anantram, M. Ogawa, and T. Miyoshi, “Comparison of
Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches
in Nano MOS Simulation,” J. Computational Electronics, Vol. 4, No. 1/2, pp.
35-38, April 2005.
[28] H. Tsuchiya, A.
Oda, M. Ogawa, and T. Miyoshi, “Quantum-Corrected Monte Carlo and Molecular
Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in
Silicon Metal-Oxide-Semiconductor Field-Effect Transistors,” Jpn. J. Appl.
Phys., Vol. 44, No. 11, pp. 7820-7826, Nov. 2005. (DOI: 10.1143/JJAP.44.7820)
[29] H. Tsuchiya, K.
Fujii, T. Mori, and T. Miyoshi, “A Quantum-Corrected Monte Carlo Study on
Quasi-Ballistic Transport in Nanoscale MOSFETs,” IEEE Trans. on Electron
Devices, Vol. 53, No. 12, pp. 2965-2971, Dec. 2006. (DOI:
10.1109/TED.2006.885672)
[30] T. Mori, Y.
Azuma, H. Tsuchiya, and T. Miyoshi, “Comparative Study on Drive Current of
III-V Semiconductor, Ge and Si Channel n-MOSFETs based on Quantum-Corrected
Monte Carlo Simulation,” IEEE Trans. on Nanotechnology, Vol. 7, No. 2, pp.
237-241, Mar. 2008. (DOI: 10.1109/TNANO.2007.915002)
[31] Takeshi Hara, Yoshihiro Yamada, Tadashi Maegawa, and Hideaki Tsuchiya,
“Atomistic Study on Electronic Properties of Nanoscale SOI Channels,” J.
Physics: Conference Series (Int’l Symp. on Advanced Nanodevices and Nanotechnology
(ISANN2007), Hawaii, 2-7 Dec. 2007), Vol. 109, 012012, 2008. (DOI: 10.1088/1742-6596/109/1/012012)
[32] Yūsuke Azuma,
Takashi Mori, and Hideaki Tsuchiya, “Drive Current of Ultrathin Ge-on-Insulator
n-Channel MOSFETs,” Phys. Stat. Sol. (c), Vol. 5, No. 9, pp. 3153-3155, Mar.
2008. (DOI: 10.1002/pssc.200779219)
[33] Hideaki Tsuchiya
and
Shin-ichi Takagi, “Influence of Elastic and Inelastic Phonon Scattering
on the Drive Current of Quasi-Ballistic MOSFETs,” IEEE Trans. on
Electron Devices, Vol. 55, No. 9, pp. 2397-2402, Sep. 2008. (DOI:
10.1109/TED.2008.927384)
[34] Tadashi Maegawa,
Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, and Matsuto Ogawa, “Strain
Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to
Nanowire,” IEEE Trans. on Electron Devices, Vol. 56, No. 4, pp. 553-559, Apr.
2009. (DOI: 10.1109/TED.2009.2014185)
[35] Yoshihiro Yamada,
Hideaki Tsuchiya, and Matsuto Ogawa, “A First Principles Study on Tunneling
Current Through Si/SiO2/Si Structures,” J. Appl. Phys., Vol. 105,
No. 8, 083702, Apr. 2009. (DOI: 10.1063/1.3106115)
[36] Wei Wang, Hideaki
Tsuchiya, and Matsuto Ogawa, “Enhancement of Carrier Ballistic Transport in
Schottky S/D MOSFETs,” ECS Transactions, Vol. 19, No. 1, pp. 345-350, 2009.
[37] Hideaki Tsuchiya, Yoshihiro Yamada, Satofumi Souma, and Matsuto Ogawa,
“Device Physics and Simulation Techniques for Nanoscale SOI-MOSFETs (invited),”
ECS Transactions, Vol. 19, No. 4, pp. 211-220, 2009.
[38] Yoshihiro Yamada,
Hideaki Tsuchiya, and Matsuto Ogawa, “Quantum Transport Simulation of Silicon
Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport
Equation,” IEEE Trans. on Electron Devices, Vol. 56, No. 7, pp. 1396-1401, July
2009. (DOI: 10.1109/TED.2009.2021355)
[39] Wei Wang, Hideaki
Tsuchiya, and Matsuto Ogawa, “Enhancement of Ballistic Efficiency due to Source
to Channel Heterojunction Barrier in Si Metal Oxide Semiconductor Field Effect
Transistors,” J. Appl. Phys., Vol. 106, No. 2, 024515, Jul. 2009. (DOI:
10.1063/1.3186028)
[40] Hideaki Tsuchiya,
Haruki Ando, Shun Sawamoto, Tadashi Maegawa, Takeshi Hara, Hironobu Yao, and
Matsuto Ogawa, “Comparisons of Performance Potentials of Silicon Nanowire and
Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects,”
IEEE Trans. on Electron Devices, Vol. 57, No. 2, pp. 406-414, Feb. 2010. (DOI:
10.1109/TED.2009.2037365)
[41] Hideaki Tsuchiya,
Akihiro Maenaka, Takashi Mori, and Yūsuke Azuma, “Role of Carrier Transport in
Source and Drain Electrodes of High-Mobility MOSFETs,” IEEE Electron Device
Letters, Vol. 31, No. 4, pp. 365-367, Apr. 2010. (DOI:
10.1109/LED.2010.2040024)
[42] Shunsuke Koba, Ryō
Aoyagi and Hideaki Tsuchiya, “Quantum Transport Simulation of Nanoscale
Semiconductor Devices Based on Wigner Monte Carlo Approach,” J. Appl. Phys.,
Vol. 108, No. 6, 064504, Sep. 2010. (DOI: 10.1063/1.3487482)
[43] Hiroshi Hosokawa,
Ryūtaro Sako, Haruki Ando, and Hideaki Tsuchiya, “Performance Comparisons of
Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under
Ballistic Transport,” Jpn. J. Appl. Phys., Vol. 49, 110207, Nov. 2010. (DOI:
10.1143/JJAP.49.110207)
[44] Ryutaro Sako,
Hiroshi Hosokawa, and Hideaki Tsuchiya, “Computational Study of Edge
Configuration and Quantum Confinement Effects on Graphene Nanoribbon Transport,”
IEEE Electron Device Letters, Vol. 32, No. 1, pp. 6-8, Jan. 2011. (DOI:
10.1109/LED.2010.2086426)
[45] Yōsuke Maegawa,
Shunsuke Koba, Hideaki Tsuchiya, and Matsuto Ogawa, “Influence of Source/Drain
Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel
Metal-Oxide-Semiconductor Field-Effect Transistors,” Applied Physics Express,
Vol. 4, p. 084301, Aug. 2011. (DOI: 10.1143/APEX.4.084301)
[46] Ryutaro Sako,
Hideaki Tsuchiya, and Matsuto Ogawa, “Influence of Band-Gap Opening on
Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs,”
IEEE Trans. on Electron Devices, Vol. 58, No. 10, pp. 3300-3306, Oct. 2011.
(DOI: 10.1109/TED.2011.2161992)
[47] Naoya Takiguchi,
Shunsuke Koba, Hideaki Tsuchiya, and Matsuto Ogawa, “Comparisons of Performance
Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport,” IEEE
Trans. on Electron Devices, Vol. 59, No. 1, pp. 206-211, Jan. 2012. (DOI: 10.1109/TED.2011.2172615)
[48] Yoshihiro Yamada,
Hideaki Tsuchiya, and Matsuto Ogawa, “Atomistic Modeling of Electron-Phonon
Interaction and Electron Mobility in Si nanowires,” J. Appl. Phys., Vol. 111,
No. 6, 063720, Mar. 2012. (DOI: 10.1063/1.3695999)
[49] Jaeil
Choi, Katsuyuki Nagai, Shunsuke Koba, Hideaki Tsuchiya, and Matsuto Ogawa, “Performance
Analysis of Junctionless Transistors Based on Monte Carlo Simulation,” Applied Physics Express, Vol. 5, p. 054301, Apr. 2012. (DOI: 10.1143/APEX.5.054301)
[50] Hideaki
Tsuchiya, Hiroshi Hosokawa, Ryūtaro Sako, Naomi Hasegawa, and Matsuto Ogawa, “Theoretical
Evaluation of Ballistic Electron Transport in Field-Effect Transistors with
Semiconducting Graphene Channels,” Jpn. J. Appl. Phys., Vol. 51, 055103, May
2012. (DOI: 10.1143/JJAP.51.055103)
[51] Kenta Shimoida, Yoshihiro Yamada, Hideaki Tsuchiya, and Matsuto Ogawa,
“Orientational Dependence in Device Performances of InAs and Si Nanowire
MOSFETs under Ballistic Transport,” IEEE Trans. on Electron Devices, Vol.
60, No. 1, pp. 117-122, Jan. 2013. (DOI: 10.1109/TED.2012.2228199)
[52] Kenta Shimoida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori,
and Matsuto Ogawa, “Performance Comparison of InAs, InSb, and GaSb n-Channel
Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic
Transport Limit,” Applied Physics Express, Vol. 6, p. 0343301, Feb. 2013.
(DOI: 10.7567/APEX.6.034301)
[53] Katsuyuki Nagai, Hideaki Tsuchiya, and Matsuto Ogawa, “Channel Length
Scaling Effects on Device Performance of Junctionless Field-Effect Transistor,”
Jpn. J. Appl. Phys., Vol. 52, p. 044302, Mar. 2013. (DOI: 10.7567/JJAP.52.044302)
[54] Ryutaro Sako, Naomi Hasegawa, Hideaki Tsuchiya, and Matsuto Ogawa,
“Computational Study on Band Structure Engineering using Graphene Nanomeshes,”
J. Appl. Phys., Vol. 113, no. 14, p. 143702, Apr. 2013. (DOI: 10.1063/1.4800624)
[55] Shunsuke Koba, Yosuke Maegawa, Masaki Ohmori, Hideaki Tsuchiya, Yoshinari
Kamakura, Nobuya Mori, and Matsuto Ogawa, “Increased Subthreshold Current
due to Source-Drain Direct Tunneling in Ultrashort-Channel III-V Metal-Oxide-Semiconductor
Field-Effect-Transistors,” Applied Physics Express, Vol. 6, p. 064301,
May 2013. (DOI: 10.7567/APEX.6.064301)
[56] Junko Sato-Iwanaga, Akira Inoue, Haruyuki Sorada, Takeshi Takagi,
Aude Rothschid, Roger Loo, Serge Biesemans, Choshu Ito, Yang Liu, Robert
W. Dutton, and Hideaki Tsuchiya, "Optimized Design of Si-Cap Layer
in Strained-SiGe Channel p-MOSFETs Based on Computational and Experimental
Approaches," Solid-State Electron., Vol. 91, pp. 1-8, 2014. (DOI:
10.1016/j.sse.2013.09.010)
[57] Shunsuke Koba, Masaki Ohmori, Yosuke Maegawa, Hideaki Tsuchiya, Yoshinari
Kamakura, Nobuya Mori, and Matsuto Ogawa, "Channel Length Scaling
Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling,"
Jpn. J. Appl. Phys., Vol. 53, p. 04EC10, Feb. 2014. (DOI: 10.7567/JJAP.53.04EC10)
[58] Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and
Matsuto Ogawa, "Theoretical Performance Estmation of Silicene, Germanene,
and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport,"
Applied Physics Express, Vol. 7, p. 035102, Mar. 2014.
[59] Hideki Hirai, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and
Matsuto Ogawa, “Electron Mobility Calculation for Graphene on Substrates,”
J. Appl. Phys., Vol. 116, p. 083703, Aug. 2014. (DOI: 10.1063/1.4893650)
[60] Junko Sato-Iwanaga, Yang Liu, Robert W. Dutton, Hideaki Tsuchiya,
and Toshiya Yokogawa, "Theoretical Considerations on Efficiency Degradation due to Thermal
Effect in a Planar GaN-Based LED with a GaN Substrate," Jpn. J. Appl.
Phys., Vol. 53, p. 102101, Oct. 2014. (DOI: 10.7567/JJAP.53.102101)
[61] Shunsuke Koba, Ryoma Ishida, Yuko Kubota, Hideaki Tsuchiya, Yoshinari
Kamakura, Nobuya Mori, and Matsuto Ogawa, "Effects of Increased Acoustic
Phonon Deformation Potential and Surface Roughness Scattering on Quasi-Ballistic
Transport in Ultrascaled Si-MOSFETs," Jpn. J. Appl. Phys., Vol. 53,
p. 114301, Oct. 2014. (DOI: 10.7567/JJAP.53.114301)
[62] Masato Ichii, Ryoma Ishida, Hideaki Tsuchiya, Yoshinari Kamakura,
Nobuya Mori, and Matsuto Ogawa, "Computational study of effects of
surface roughness and impurity scattering in Si double-gate junctionless
transistors," IEEE Trans. on Electron Devices, Vol. 62, No. 4, pp.
1255-1261, Apr. 2015. (DOI: 10.1109/TED.2015.2399954)
[63] 土屋英昭、”微細化限界に挑戦する新型MOSFETのキャリア輸送特性とシミュレーション技術(招待論文),” 電子情報通信学会論文誌C,
Vol. J98-C, No. 5, pp. 70-78, May 2015
[64] Hideaki Tsuchiya, Shiro Kaneko, Noriyasu Mori, and Hideki Hirai, "Simulation
of Electron Transport in Atomic Monolayer Semiconductor FETs (invited),"
J. Adv. Simulat. Sci. Eng., vol. 2, no. 1, pp. 127-152, May 2015.
[65] Casey Clendennen, Nobuya Mori, and Hideaki Tsuchiya, "Non-equilibrium
Green function simulations of graphene, silicene, and germanene field-effect
transistors," J. Adv. Simulat. Sci. Eng., vol. 2, no. 1, pp. 171-177,
May 2015.
Candle lane
Hideaki Tsuchiya Research Group(土屋 英昭 研究グループ)
〒657-8501 神戸市灘区六甲台町1-1
神戸大学大学院工学研究科 電気電子工学専攻
TEL: 078-803-6082
Email: tsuchiya[at]eedept.kobe-u.ac.jp(メールを送るときは[at]を@に変えて送ってください)
Chicago River
Hessel Park Office, Champaign