著書
「ナノエレクトロニクスの基礎」,三好旦六,小川真人,土屋英昭,培風館(2007年11月2日).ISBN978-4-563-06764-9.


「量子物理」−OHM大学テキストシリーズ− 森伸也編著,執筆者:鎌倉良成,宇野重康,伊藤博介,土屋英昭,尾崎俊二,オーム社(2012年11月25日).ISBN978-4-274-21289-5.


「ナノ構造エレクトロニクス入門」,土屋英昭,コロナ社(2013年8月23日).ISBN978-4-339-00851-7.


学術論文
[1] H. Tsuchiya and T. Miyoshi, “Optically Induced Josephson Effect,” Trans. IEICE, Vol. E71, No. 10, pp. 950-951, Oct. 1988.

[2] H. Tsuchiya, M. Ogawa, and T. Miyoshi, “Simulation of Quantum Transport in Quantum Devices with Spatially Varying Effective Mass,” IEEE Trans. on Electron Devices, Vol. 38, No. 6, pp. 1246-1252, Jun. 1991.

[3] H. Tsuchiya, M. Ogawa, and T. Miyoshi, “Wigner Function Formulation of Quantum Transport in Electron Waveguides and Its Application,” Jpn. J. Appl. Phys., Vol. 30, No. 12B, pp. 3853-3858, Dec. 1991.

[4] T. Miyoshi, H. Tsuchiya, and M. Ogawa, “Quantum Hole Transport at the Heterointerface of Long Wavelength Avalanche Photodiodes,” IEEE J. Quantum Electron., Vol. 28, No. 1, pp. 25-30, Jan. 1992.

[5] H. Tsuchiya, M. Ogawa, and T. Miyoshi, “Static and Dynamic Electron Transport in Resonant-Tunneling Diodes,” Jpn. J. Appl. Phys., Vol. 31, No. 3, pp. 745-750, Mar. 1992.


[6] H. Tsuchiya, M. Ogawa, and T. Miyoshi, “Quantum-Mechanical Simulation of Electron Waveguides in Linear and Nonlinear Transport Regimes,” IEEE Trans. on Electron Devices, Vol. 39, No. 11, pp. 2465-2471, Nov. 1992.

[7] H. Tsuchiya and T. Miyoshi, “Quantum Transport Modeling of Mesoscopic Devices: Application of Wigner Distribution Function,” Jpn. J. Appl. Phys., Vol. 34, No. 8B, pp. 4473-4476, Aug. 1995.

[8] Y. Okawa, H. Tsuchiya, and T. Miyoshi, “Guided Modes in a Si-Quantum Wire and Their Control,” Jpn. J. Appl. Phys., Vol. 35, No. 2B, pp. 861-864, Feb. 1996.

[9] H. Tsuchiya and T. Miyoshi, “Bipolar Quantum Transport Modeling of Carrier Injection into a SCH-Quantum-Well Laser,” IEEE J. Quantum Electron., Vol. 32, No. 5, pp. 865-872, May 1996.

[10] Y. Okawa, H. Tsuchiya, and T. Miyoshi, “Guided Modes in an Arbitrarily Oriented Si-Quantum Wire and Their Control,” Physica B, Vol. 227, pp. 330-332, 1996.

[11] H. Tsuchiya, Y. Hayashi, and T. Miyoshi, “Spatially Ununiform Gain in MQW Lasers Caused by Nonequilibrium Carrier Transport,” Physica B, Vol. 227, pp. 411-414, 1996.

[12] H. Tsuchiya and T. Miyoshi, “Evaluation of Phase Coherent Length of Hot Electrons Based on Wigner Distribution Function,” Jpn. J. Appl. Phys., Vol. 36, No. 7A, pp. L845-L848, Jul. 1997.

[13] H. Tsuchiya and T. Miyoshi, “Nonequilibrium Green’s Function Approach to High-Temperature Quantum Transport in Nanostructure Devices,” J. Appl. Phys., Vol. 83, No. 5, pp. 2574-2585, Mar. 1998.

[14] H. Tsuchiya and T. Miyoshi, “Influence of Phonon Bottleneck on a Quantum Dot Laser,” Solid State Electron., Vol. 42, Nos. 7/8, pp. 1443-1447, Aug. 1998.

[15] H. Tsuchiya and T. Miyoshi, “Finite Homogeneous Broadening of Laser Gain in Quantum Dots at High Temperature,” Microelectronic Engineering, Vol. 47, Nos. 1-4, pp. 139-141, June 1999.

[16] H. Tsuchiya and T. Miyoshi, “Quantum Mechanical Correction of Potential in Boltzmann Transport Equation for Quantum Transport Modeling,” Microelectronic Engineering, Vol. 47, Nos. 1-4, pp. 345-347, June 1999.

[17] H. Tsuchiya and T. Miyoshi, “Quantum Transport Modeling of Ultrasmall Semiconductor Devices (invited),” IEICE Trans. on Electron., Vol. E82-C, No. 6, pp. 880-888, Jun. 1999.

[18] H. Tsuchiya and T. Miyoshi, “Quantum Mechanical Monte Carlo Approach to Electron Transport at Heterointerface,” Superlattices and Microstructures, Vol. 27, Nos. 5/6, pp. 529-532, Jun. 2000. (DOI: 10.1006/spmi.2000.0864)

[19] K. Matsuda, K. Ikeda, T. Saiki, H. Tsuchiya, H. Saito, and K. Nishi, “Homogeneous Linewidth Broadening in a In0.5Ga0.5As/GaAs Single Quantum Dot at Room Temperature Investigated Using a Highly Sensitive Near-Field Scanning Optical Microscope,” Phys. Rev. B, Vol. 63, pp. 121304-1121304-4, Mar. 2001. (DOI: 10.1103/PhysRevB.63.1213XX)

[20] H. Tsuchiya and U. Ravaioli, “Particle Monte Carlo Simulation of Quantum Phenomena in Semiconductor Nanostructures,” J. Appl. Phys., Vol. 89, No. 7, pp. 4023-4029, Apr. 2001. (DOI: 10.1063/1.1354653)

[21] H. Tsuchiya, B. Winstead, and U. Ravaioli, “Quantum Potential Approaches for Nano-Scale Device Simulation,” VLSI Design, Vol. 13, Nos. 1-4, pp. 335-340, 2001.

[22] B. Winstead, H. Tsuchiya, and U. Ravaioli, “Quantum Corrections for Monte Carlo Simulation (invited),” J. Computational Electronics, Vol. 1, pp. 201-207, July 2002.

[23] H. Tsuchiya and U. Ravaioli, “A Particle Description Model for Quantum Tunneling Effects,” J. Computational Electronics, Vol. 1, pp. 295-299, July 2002.

[24] M. Ogawa, H. Tsuchiya, and T. Miyoshi, “Quantum Electron Transport Modeling in Nano-Scale Devices (invited),” IEICE Trans. on Electron., Vol. E86-C, No. 3, pp. 363-371, March 2003.

[25] H. Tsuchiya, M. Horino, M. Ogawa, and T. Miyoshi, “Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors,” Jpn. J. Appl. Phys., Vol. 42, No. 12, pp. 7238-7243, Dec. 2003. (DOI: 10.1143/JJAP.42.7238)

[26] H. Tsuchiya, M. Horino, and T. Miyoshi, “Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs,” J. Computational Electronics, Vol. 2, No. 2/3/4, pp. 91-95, Dec. 2003.

[27] H. Tsuchiya, A. Svizhenko, M. P. Anantram, M. Ogawa, and T. Miyoshi, “Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation,” J. Computational Electronics, Vol. 4, No. 1/2, pp. 35-38, April 2005.

[28] H. Tsuchiya, A. Oda, M. Ogawa, and T. Miyoshi, “Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors,” Jpn. J. Appl. Phys., Vol. 44, No. 11, pp. 7820-7826, Nov. 2005. (DOI: 10.1143/JJAP.44.7820)

[29] H. Tsuchiya, K. Fujii, T. Mori, and T. Miyoshi, “A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs,” IEEE Trans. on Electron Devices, Vol. 53, No. 12, pp. 2965-2971, Dec. 2006. (DOI: 10.1109/TED.2006.885672)

[30] T. Mori, Y. Azuma, H. Tsuchiya, and T. Miyoshi, “Comparative Study on Drive Current of III-V Semiconductor, Ge and Si Channel n-MOSFETs based on Quantum-Corrected Monte Carlo Simulation,” IEEE Trans. on Nanotechnology, Vol. 7, No. 2, pp. 237-241, Mar. 2008. (DOI: 10.1109/TNANO.2007.915002)

[31] Takeshi Hara, Yoshihiro Yamada, Tadashi Maegawa, and Hideaki Tsuchiya, “Atomistic Study on Electronic Properties of Nanoscale SOI Channels,” J. Physics: Conference Series (Int’l Symp. on Advanced Nanodevices and Nanotechnology (ISANN2007), Hawaii, 2-7 Dec. 2007), Vol. 109, 012012, 2008. (DOI: 10.1088/1742-6596/109/1/012012)

[32] Yūsuke Azuma, Takashi Mori, and Hideaki Tsuchiya, “Drive Current of Ultrathin Ge-on-Insulator n-Channel MOSFETs,” Phys. Stat. Sol. (c), Vol. 5, No. 9, pp. 3153-3155, Mar. 2008. (DOI: 10.1002/pssc.200779219)

[33] Hideaki Tsuchiya and Shin-ichi Takagi, “Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs,” IEEE Trans. on Electron Devices, Vol. 55, No. 9, pp. 2397-2402, Sep. 2008. (DOI: 10.1109/TED.2008.927384)

[34] Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, and Matsuto Ogawa, “Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire,” IEEE Trans. on Electron Devices, Vol. 56, No. 4, pp. 553-559, Apr. 2009. (DOI: 10.1109/TED.2009.2014185)

[35] Yoshihiro Yamada, Hideaki Tsuchiya, and Matsuto Ogawa, “A First Principles Study on Tunneling Current Through Si/SiO2/Si Structures,” J. Appl. Phys., Vol. 105, No. 8, 083702, Apr. 2009. (DOI: 10.1063/1.3106115)

[36] Wei Wang, Hideaki Tsuchiya, and Matsuto Ogawa, “Enhancement of Carrier Ballistic Transport in Schottky S/D MOSFETs,” ECS Transactions, Vol. 19, No. 1, pp. 345-350, 2009.

[37] Hideaki Tsuchiya, Yoshihiro Yamada, Satofumi Souma, and Matsuto Ogawa, “Device Physics and Simulation Techniques for Nanoscale SOI-MOSFETs (invited),” ECS Transactions, Vol. 19, No. 4, pp. 211-220, 2009.

[38] Yoshihiro Yamada, Hideaki Tsuchiya, and Matsuto Ogawa, “Quantum Transport Simulation of Silicon Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport Equation,” IEEE Trans. on Electron Devices, Vol. 56, No. 7, pp. 1396-1401, July 2009. (DOI: 10.1109/TED.2009.2021355)

[39] Wei Wang, Hideaki Tsuchiya, and Matsuto Ogawa, “Enhancement of Ballistic Efficiency due to Source to Channel Heterojunction Barrier in Si Metal Oxide Semiconductor Field Effect Transistors,” J. Appl. Phys., Vol. 106, No. 2, 024515, Jul. 2009. (DOI: 10.1063/1.3186028)

[40] Hideaki Tsuchiya, Haruki Ando, Shun Sawamoto, Tadashi Maegawa, Takeshi Hara, Hironobu Yao, and Matsuto Ogawa, “Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects,” IEEE Trans. on Electron Devices, Vol. 57, No. 2, pp. 406-414, Feb. 2010. (DOI: 10.1109/TED.2009.2037365)

[41] Hideaki Tsuchiya, Akihiro Maenaka, Takashi Mori, and Yūsuke Azuma, “Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs,” IEEE Electron Device Letters, Vol. 31, No. 4, pp. 365-367, Apr. 2010. (DOI: 10.1109/LED.2010.2040024)

[42] Shunsuke Koba, Ryō Aoyagi and Hideaki Tsuchiya, “Quantum Transport Simulation of Nanoscale Semiconductor Devices Based on Wigner Monte Carlo Approach,” J. Appl. Phys., Vol. 108, No. 6, 064504, Sep. 2010. (DOI: 10.1063/1.3487482)

[43] Hiroshi Hosokawa, Ryūtaro Sako, Haruki Ando, and Hideaki Tsuchiya, “Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport,” Jpn. J. Appl. Phys., Vol. 49, 110207, Nov. 2010. (DOI: 10.1143/JJAP.49.110207)

[44] Ryutaro Sako, Hiroshi Hosokawa, and Hideaki Tsuchiya, “Computational Study of Edge Configuration and Quantum Confinement Effects on Graphene Nanoribbon Transport,” IEEE Electron Device Letters, Vol. 32, No. 1, pp. 6-8, Jan. 2011. (DOI: 10.1109/LED.2010.2086426)

[45] Yōsuke Maegawa, Shunsuke Koba, Hideaki Tsuchiya, and Matsuto Ogawa, “Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors,” Applied Physics Express, Vol. 4, p. 084301, Aug. 2011. (DOI: 10.1143/APEX.4.084301)

[46] Ryutaro Sako, Hideaki Tsuchiya, and Matsuto Ogawa, “Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs,” IEEE Trans. on Electron Devices, Vol. 58, No. 10, pp. 3300-3306, Oct. 2011. (DOI: 10.1109/TED.2011.2161992)

[47] Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, and Matsuto Ogawa, “Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport,” IEEE Trans. on Electron Devices, Vol. 59, No. 1, pp. 206-211, Jan. 2012. (DOI: 10.1109/TED.2011.2172615)

[48] Yoshihiro Yamada, Hideaki Tsuchiya, and Matsuto Ogawa, “Atomistic Modeling of Electron-Phonon Interaction and Electron Mobility in Si nanowires,” J. Appl. Phys., Vol. 111, No. 6, 063720, Mar. 2012. (DOI: 10.1063/1.3695999)

[49] Jaeil Choi, Katsuyuki Nagai, Shunsuke Koba, Hideaki Tsuchiya, and Matsuto Ogawa, “Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation,” Applied Physics Express, Vol. 5, p. 054301, Apr. 2012. (DOI: 10.1143/APEX.5.054301)

[50] Hideaki Tsuchiya, Hiroshi Hosokawa, Ryūtaro Sako, Naomi Hasegawa, and Matsuto Ogawa, “Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels,” Jpn. J. Appl. Phys., Vol. 51, 055103, May 2012. (DOI: 10.1143/JJAP.51.055103)

[51] Kenta Shimoida, Yoshihiro Yamada, Hideaki Tsuchiya, and Matsuto Ogawa, “Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs under Ballistic Transport,” IEEE Trans. on Electron Devices, Vol. 60, No. 1, pp. 117-122, Jan. 2013. (DOI: 10.1109/TED.2012.2228199)

[52] Kenta Shimoida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa, “Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit,” Applied Physics Express, Vol. 6, p. 0343301, Feb. 2013. (DOI: 10.7567/APEX.6.034301)

[53] Katsuyuki Nagai, Hideaki Tsuchiya, and Matsuto Ogawa, “Channel Length Scaling Effects on Device Performance of Junctionless Field-Effect Transistor,” Jpn. J. Appl. Phys., Vol. 52, p. 044302, Mar. 2013. (DOI: 10.7567/JJAP.52.044302)

[54] Ryutaro Sako, Naomi Hasegawa, Hideaki Tsuchiya, and Matsuto Ogawa, “Computational Study on Band Structure Engineering using Graphene Nanomeshes,” J. Appl. Phys., Vol. 113, no. 14, p. 143702, Apr. 2013. (DOI: 10.1063/1.4800624)

[55] Shunsuke Koba, Yosuke Maegawa, Masaki Ohmori, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa, “Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort-Channel III-V Metal-Oxide-Semiconductor Field-Effect-Transistors,” Applied Physics Express, Vol. 6, p. 064301, May 2013. (DOI: 10.7567/APEX.6.064301)

[56] Junko Sato-Iwanaga, Akira Inoue, Haruyuki Sorada, Takeshi Takagi, Aude Rothschid, Roger Loo, Serge Biesemans, Choshu Ito, Yang Liu, Robert W. Dutton, and Hideaki Tsuchiya, "Optimized Design of Si-Cap Layer in Strained-SiGe Channel p-MOSFETs Based on Computational and Experimental Approaches," Solid-State Electron., Vol. 91, pp. 1-8, 2014. (DOI: 10.1016/j.sse.2013.09.010)

[57] Shunsuke Koba, Masaki Ohmori, Yosuke Maegawa, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa, "Channel Length Scaling Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling," Jpn. J. Appl. Phys., Vol. 53, p. 04EC10, Feb. 2014. (DOI: 10.7567/JJAP.53.04EC10)

[58] Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa, "Theoretical Performance Estmation of Silicene, Germanene, and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport," Applied Physics Express, Vol. 7, p. 035102, Mar. 2014.

[59] Hideki Hirai, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa, “Electron Mobility Calculation for Graphene on Substrates,” J. Appl. Phys., Vol. 116, p. 083703, Aug. 2014. (DOI: 10.1063/1.4893650)


[60] Junko Sato-Iwanaga, Yang Liu, Robert W. Dutton, Hideaki Tsuchiya, and Toshiya Yokogawa, "Theoretical Considerations on Efficiency Degradation due to Thermal Effect in a Planar GaN-Based LED with a GaN Substrate," Jpn. J. Appl. Phys., Vol. 53, p. 102101, Oct. 2014. (DOI: 10.7567/JJAP.53.102101)


[61] Shunsuke Koba, Ryoma Ishida, Yuko Kubota, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa, "Effects of Increased Acoustic Phonon Deformation Potential and Surface Roughness Scattering on Quasi-Ballistic Transport in Ultrascaled Si-MOSFETs," Jpn. J. Appl. Phys., Vol. 53, p. 114301, Oct. 2014. (DOI: 10.7567/JJAP.53.114301)

[62] Masato Ichii, Ryoma Ishida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa, "Computational study of effects of surface roughness and impurity scattering in Si double-gate junctionless transistors," IEEE Trans. on Electron Devices, Vol. 62, No. 4, pp. 1255-1261, Apr. 2015. (DOI: 10.1109/TED.2015.2399954)

[63] 土屋英昭、”微細化限界に挑戦する新型MOSFETのキャリア輸送特性とシミュレーション技術(招待論文),” 電子情報通信学会論文誌C, Vol. J98-C, No. 5, pp. 70-78, May 2015

[64] Hideaki Tsuchiya, Shiro Kaneko, Noriyasu Mori, and Hideki Hirai, "Simulation of Electron Transport in Atomic Monolayer Semiconductor FETs (invited)," J. Adv. Simulat. Sci. Eng., vol. 2, no. 1, pp. 127-152, May 2015.

[65] Casey Clendennen, Nobuya Mori, and Hideaki Tsuchiya, "Non-equilibrium Green function simulations of graphene, silicene, and germanene field-effect transistors," J. Adv. Simulat. Sci. Eng., vol. 2, no. 1, pp. 171-177, May 2015.



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